微图形定向碳纳米管场发射阵列冷阴极的研究  

Development of Micro-Patterned Well-Aligned Carbon Nanotube Field Emission Arrays

作　　者：陈长青[1] 丁明清[1] 李兴辉[1] 白国栋[1] 张甫权[1] 冯进军[1] 邵文生[1] 

机构地区：[1]北京真空电子技术研究所大功率微波电真空器件技术国防科技重点实验室,北京749信箱41分箱北京100016

出　　处：《真空科学与技术学报》2007年第5期363-366,共4页Chinese Journal of Vacuum Science and Technology

基　　金：大功率微波电真空器件技术国防科技重点实验室的资助

摘　　要：本文介绍了一种微图形化碳纳米管场发射阵列冷阴极,每个图形的直径仅为1μm,构成一个发射单元。制作工艺如下:首先在硅(100)基片上沉积氮化钛缓冲层,然后采用曝光工艺获得直径为1μm的胶孔阵列,沉积催化剂铁,最后采用直流等离子体增强化学气相沉积(DC-PECVD)生长直立的碳纳米管。并对17500个发射单元的阵列阴极进行了表面形貌表征及场发射特性测试。结果表明,碳纳米管阵列阴极的一致性较好;最低开启电场为1 V/μm;电场为17 V/μm时,测得的电流密度已达到90 mA/cm2;发射电流为550μA时,在2.5 h内的波动小于5.6%。This paper presents micro-patterned carbon hat,tube field emission arrays cathode with an emitting unit area only 1μm in diameter. The fabrication began with the deposition of a buffer layer of titanium-nitride on n type Si（100） substrate;then it was patterned by conventional lithography to form 1 μm circular aperture arrays, followed by depositing iron catalyst by electron beam deposition; and finally, the resist was removed,and carbon nanotubes（CNTs） were grown by direct current plasma enhanced chemical vapor deposition （DC-PECVD）. The field emission measurements showed that a turn-on field is as low as 1 V/μm, a current density reaches 90 mA/cm^2 at a field of 17 V/μm,and its fluctuation is less than 5.6 percent over a period of 2.5 hours at the current of 550 μA.

关 键 词：微图形 定向碳纳米管 场发射阵列冷阴极 直流等离子体增强化学气相沉积 

分 类 号：O462.4[理学—电子物理学]