大功率超高速半导体开关的换流特性研究  

Current Conversion Characteristics Research on Pulsed Power Switch Reversely Switched Dynistor

作　　者：余岳辉[1] 梁琳[1] 颜家圣 彭亚斌[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北省武汉市430074 [2]襄樊台基半导体有限公司,湖北省襄樊市441021

出　　处：《中国电机工程学报》2007年第30期38-42,共5页Proceedings of the CSEE

基　　金：国家自然科学基金项目(50277016;50577028);高等学校博士学科点专项科研基金(20050487044)~~

摘　　要：研究了一种应用于激光驱动源的大功率超高速半导体开关反向开关晶体管(RSD)的新结构,以实现μs、ns脉宽、MW以上的高重复率脉冲的产生和控制。RSD具有大面积快速均匀开通、可无限串联、功率大、换流效率高、寿命长的特点。利用单次脉冲试验平台研究了RSD的开通机理及高密度能量转换、允许通过的峰值电流、开通条件与预充、准静态损耗及其di/dt等多项特性。根据经验公式,对小直径RSD做极限电流试验,φ20mm的RSD堆体通过了19.9kA脉冲电流(脉宽30μs)。通过减小主回路电感考核了RSD的高di/dt耐量特性,放电电压3kV时得到di/dt接近8kA/μs。In order to produce and control high repetitive pulses of pulse width at μs, ns and power beyond MW, a new structure of great power and super high speed semiconductor switch reversely switched dynistor（RSD） applied to laser diode （LD） pulsed source was researched. RSD has characteristics of quick and uniform turn-on on whole area, infinite connection in series, high power, high efficiency of convorting and long lifetime. The turn-on mechanism and high density energy transform characteristics, available peak current, turn-on condition and pre-charge, quasi-static state dissipation and di/dt characteristics of RSD were researched on single pulse experimental platform. According to experiential formula, the extreme current experiments were done on RSDs of small diameter. The pulse current of 19.9kA（pulse width is about 30μs） has flowed through Ф 20mm RSD stack. The high di/dt capability was tested by reducing inductance of main circuit. The di/dt is near to 8kA/μs when discharge voltage is 3kV.

关 键 词：大功率开关 反向开关晶体管 开通特性 脉冲 DI/DT 

分 类 号：TN86[电子电信—信息与通信工程]