高气压下微晶硅薄膜的生长及微结构研究(英文)  

Growth and Microstructures of Microcrystalline Silicon Thin Films under High Pressures

作　　者：杨根[1] 张丽伟[1] 卢景霄[1] 谷锦华[1] 陈永生[1] 文书堂[1] 汪昌州[1] 王子健[1] 

机构地区：[1]郑州大学物理工程学院教育部材料物理重点实验室,郑州450052

出　　处：《人工晶体学报》2007年第3期646-649,686,共5页Journal of Synthetic Crystals

基　　金：The project supported by the National Basic Research Program(No.2006CB202601)(973 Program)

摘　　要：通过射频等离子体增强化学气相沉积,在高气压条件下制备了微晶硅薄膜,并用拉曼光谱仪(Ram an)、扫描电镜(SEM)研究了微晶硅薄膜的微观结构。发现沉积速率在5Torr左右出现极大值,薄膜的晶化率随着沉积气压的升高而降低,薄膜表面的晶粒或团簇随着沉积气压的下降而增大,薄膜的粗糙度随着沉积气压的升高而降低。Microcrystalline silicon thin films were deposited under high deposition pressures using radio frequency plasma enhanced chemical vapor deposition （RF PECVD）. Microstructures were studied using Raman, scanning electron microscopy （SEM）. It is found that deposition rate shows a maximum at around 5Torr. The crystalline volume ratio decreases with the deposition pressure increasing. Larger grains or clusters are observed as pressure decreases. The films become less poros as pressure increases.

关 键 词：等离子体增强化学气相沉积 微晶硅薄膜 高气压 高速沉积 微观结构 

分 类 号：O484[理学—固体物理]