双极电路欧姆接触问题的工艺分析与解决方案  

Process Analysis of Ohmic Contact Problem in Bipolar IC and Its Solution

作　　者：阚玲[1] 张扬波[1] 许生健[1] 朱煜开[1] 

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2007年第5期678-681,共4页Microelectronics

摘　　要：为解决一种双极集成电路在生产中欧姆接触电阻过大的问题,针对关键工艺进行了统计分析和专项实验,找到了问题的原因和解决方法,对提高大规模集成电路的工艺制造稳定性具有非常重要的意义。Quantitative statistical analysis and relevant experiment were made, which was focused on the abnormal phenomenon that the ohmic contact resistance between the metal layer （AlSi） and the contact region （P^＋ and N^- silicon） occurred in fabrication process of a bipolar IC. As a result,causes of the problem were found and solutions were proposed, which is of great importance to improve the stability of LSI manufacturing process.

关 键 词：双极集成电路 欧姆接触 薄氧化物 湿法腐蚀 工艺控制 

分 类 号：TN405[电子电信—微电子学与固体电子学]