钛酸钡铁电薄膜的常压MOCVD制备及其物理性质的研究  

PREPARATION AND PROPERTIES OF BaTiO 3 FERROELECTRIC THIN FILMS BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION

作　　者：曾建明[1,2,3] 王弘 王民[1,2,3] 尚淑霞 王卓[1,2,3] 程建功[1,2,3] 林成鲁 

机构地区：[1]中科院上海冶金研究所信息功能材料国家重点实验室 [2]山东大学晶体材料研究所国家重点实验室 [3]山东大学实验中心

出　　处：《功能材料与器件学报》1997年第2期129-135,共7页Journal of Functional Materials and Devices

摘　　要：本文报道了用常压金属有机化学气相沉积（ＡＰＭＯＣＶＤ）法在Ｓｉ衬底上制备高质量的钛酸钡铁电薄膜。钡的β二酮螯合物［Ｂａ（ＤＰＭ）２］和异丙氧基钛（ＴＩＰ）作为金属有机源，在衬底温度为７０００Ｃ时，在Ｓｉ（１００）衬底上生长的钛酸钡薄膜是多晶膜，表面光滑、平整。经快速退火（Ｔ＝７５００Ｃ）后，薄膜具有完全的［００１］取向，其介电常数（ε）为１０７。研究了衬底温度与薄膜的结晶性和取向性的关系；讨论了半导体衬底对钛酸钡铁电薄膜物理性质的影响；得到了薄膜的剩余自发极化强度（Ｐｒ）为２０μＣ／ｃｍ２，矫顽电场（Ｅｃ）为４０ＫＶ／ｃｍ。BaTiO 3 ferroelectric thin films have been prepared on Si substrate by Metalorganic Chemical Vapor Deposition (MOCVD) at atmospheric pressure Ba(DPM) 2 and titanium isopoproxide(TIP) were used as metalorganic source The structure of the thin films was studied by SEM and XRD The prepared films atsubstrate temperature of 700 0C on Si substrate showed polycrystalline structure with smooth and uniform surface After rapid thermal annealing, the films have fully textured with (001) -orientation, and have a dielectric constant(ε) of 107 The relationship between the temperature of substrates and crystallographic orientations was investigated, the influence of substrate on the physical properties of the films was also discussed The 100nm-thick film exhibited remnant polarization(P r) of 2 0μC/cm 2, and coercive field(E c) of 4 0KV/cm

关 键 词：MOCVD 铁电薄膜 钛酸钡 制备 物理性质 

分 类 号：TN304.905[电子电信—物理电子学]