锗单晶片的碱性腐蚀特性分析  

Properties Analysis of Alkali Etching on Ge Wafer

作　　者：吕菲[1] 刘春香[1] 杨洪星[1] 赵权[1] 于妍[1] 赵秀玲[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《半导体技术》2007年第11期967-969,共3页Semiconductor Technology

摘　　要：讨论了锗单晶研磨片在强碱性腐蚀液和弱碱性腐蚀液中的腐蚀特性。研究了锗单晶片在两种不同腐蚀液中的腐蚀速率随腐蚀液温度、浓度的变化规律。通过探索腐蚀速率、表面光洁度及腐蚀去除量和表面粗糙度的关系,可知腐蚀片表面光洁度和腐蚀速率有关而与去除量无关。腐蚀片的表面粗糙度和去除量有关,去除量越大,粗糙度越大。表面粗糙度也与腐蚀液的碱性强弱有关,当去除量相同时,在强碱性腐蚀液中的锗腐蚀片的表面粗糙度更小。在实际应用中,应针对不同目的,选择适宜的化学腐蚀工艺。The etching properties of Ge wafer in strong and weak alkali etching solutions were discussed, The changing rules of the etching rates in both the solutions with different temperatures and densities were studied. The results show that the surface lightness of Ge wafer relates to the etching rate but not to the etching removal, and the roughness to the etching removal, This means the more the removal is, the heavier the roughness is. The relationship between the roughness and the strength of alkalinity is that the roughness is weaker when the alkalinity is stronger with the same removal. So the proper techniques of chemical etching are chosen at different aims in the practical applications.

关 键 词：化学腐蚀 光洁度 粗糙度 

分 类 号：TN305.2[电子电信—物理电子学]