A Continuous and Analytical Surface Potential Model for SOI LDMOS  

一个连续且解析的SOI LDMOS表面势模型(英文)

作　　者：徐文杰[1] 孙玲玲[1] 刘军[1] 李文钧[1] 张海鹏[1] 吴颜明[1] 何佳[1] 

机构地区：[1]杭州电子科技大学微电子CAD研究所,杭州310017

出　　处：《Journal of Semiconductors》2007年第11期1712-1716,共5页半导体学报（英文版）

摘　　要：A continuous and analytical surface potential model for SOI LDMOS, which accounts for automatic transitions between fully and partially-depleted statuses,is presented. The surface potential equation of the SOI de- vice is solved by using the PSP′s accurate algorithm of surface potential,and the front and back surface potentials are obtained analytically as a function of gate and drain voltage. The formulations of inversion charge and body charge under the fully-depleted state have been modified. The continuous and analytical DC model for SOl LD- MOS is given based on PSP. The comparisons between simulation and measurements indicate that this model can predict the DC characteristics of SOI LDMOS accurately.提出了一个实现全耗尽与部分耗尽自动转换的体接触SOI LDMOS连续解析表面势模型.采用PSP的精确表面势算法求解SOI器件的表面势方程,得到了解析的以栅压和漏压为变量的SOI器件正、背硅/氧化层界面的表面势.修正了全耗尽状态下的反型层电荷和体电荷表达式,结合PSP的模型方程,给出连续解析的体接触SOI LD-MOS直流模型.仿真结果与实验数据比较,二者吻合得很好,表明该模型能精确表征SOI LDMOS直流特性.

关 键 词：SOI LDMOS body contact surface potential PSP 

分 类 号：TN386.1[电子电信—物理电子学]