两面顶低温超高压烧结纳米碳化硅的研究  

Twain face anvils sinter SiC at low temperature and ultrahigh-pressure

作　　者：谢茂林[1] 罗德礼[1] 鲜晓斌[1] 冷邦义[1] 范辉[1] 

机构地区：[1]中国工程物理研究院,表面物理与化学国家重点实验室,四川绵阳621907

出　　处：《功能材料》2007年第A10期3790-3792,共3页Journal of Functional Materials

摘　　要：采用两面顶低温超高压（LT-HP）技术在压力4．5GPa、温度（1250±50）℃、烧结时间20min的条件下烧结制备了纳米碳化硅（SiC）陶瓷，研究了烧结体的物相组成、化学成分、微观结构、显微硬度、纳米压痕力学性能等。结果表明，不添加烧结助剂且在较低温度下获得的SiC烧结体的相对密度高达98．4％，其显微硬度达到HV3520；纳米压痕测试硬度高达H31．74GPa、弹性模量E313GPa；烧结体的晶粒尺寸约为89nm，结构致密，无气孔。A new route to sintering SiC was introduced at low temperature and ultra-high pressure （LT-HP）. The sintering condition is 4.5GPa, （1250 ±50）℃,20min. The phase formation, chemistry composition, microstructure, micro-hardness and nano indent mechanical properties of SiC were studied. SiC can be sintered by LT-HP technic even without additives and its density can reach as high as 98.4% theory density （TD）. The microstructures of the sintered SiC has very little hole and the grain size is about 89nm. Its micro-hardness is HV3520,and the mechanical property tested by nano-indent is hardness （H）31.74GPa, elastic modulus （E） 313GPa.

关 键 词：两面顶 超高压 烧结 碳化硅 

分 类 号：TB036.5[一般工业技术]