圆片冲击法硅片强度测试中简支半径问题研究  

PRELIMINARY STUDY ON SIMPLE SUPPORT RADIUS IN MEASURING STRENGTH OF SILICON SLICES WITH IMPACT METHOD

作　　者：谢书银[1] 王红忠[1] 

机构地区：[1]中南工业大学应用物理与热能工程系,长沙410083

出　　处：《中南工业大学学报》1997年第3期260-261,共2页Journal of Central South University of Technology(Natural Science)

基　　金：国家教委硅材料国家重点实验室基金

摘　　要：分析了圆片冲击法硅片强度测试中简支半径对动载荷挠度及强度测试值的影响，实验求得直径50．8mm硅片抗弯强度测试值的校正系数为0．8．The effects of simple support radius on the impact load deflection and fie-cure strength measured by impact method were studied preliminarily. The correct factor K=0. 8 for measuring strength of silicon slices with diameter 50. 8 mm was obtained by experements.

关 键 词：抗弯强度 冲击载荷 简支半径 硅片 圆片冲击法 

分 类 号：TN304.12[电子电信—物理电子学] TB302.3[一般工业技术—材料科学与工程]