n-Ga_(1-x)Al_xAs的电子喇曼散射、束缚声子和DX中心  

Growth of InP/InP and InGaAs/InP Bulk Material with High Performance by LP MOCVD

作　　者：连世阳[1] 徐建[1] 骆万发[1] 

机构地区：[1]厦门大学物理学系

出　　处：《厦门大学学报（自然科学版）》1997年第4期535-539,共5页Journal of Xiamen University：Natural Science

摘　　要：观测到ｎ－Ｇａ１－ｘＡｌｘＡｓ的束缚声子和电子喇曼散射．对ｎ－Ｇａ１－ｘＡｌｘＡｓ进行喇曼散射实验，揭示了在低温光照条件和组分超过某临界值的合金半导体存在着有效质量型的浅施主能级，引起束缚声子和电子喇曼散射．在较高温度，此能级电子减少到由ＤＸ中心表征的施主深能级．实验结果证实了Ｇａ１－ｘＡｌｘＡｓ的ｎ型杂质具有深－浅双稳特性．根据晶格动力论，浅释了Ｇａ１－ｘＡｌｘＡｓ中施主的电荷态．The growth condition of InP and InGaAs on InP substrate by Low pressure Metal Organic Chemical Vapor Deposition(LP MOCVD) was reported. The performance of InP/InP and InGaAs/InP was studied. The effect of temperature and composition on InGaAs/InP performance was also investigated. It has been found that the optimal growth temperature of InGaAs/InP is 913 K, and that the PL Full Width Half Maximize(FWHM) of InGaAs/InP is 32.0 nm at 16 K temperature, and the Hall transmute of InP/InP is 4 360 cm 2/V·s, and the back ground doping density is 5×10 14 cm -3 , and the FWHM of X ray is 21'.

关 键 词：电子喇曼散射 束缚声子 DX中心 镓铝砷 

分 类 号：O472.3[理学—半导体物理] O474[理学—物理]