工作气压对磁控溅射Ta_2O_5薄膜电学性能的影响  

Effect of the Working Gas Pressure on the Electrical Properties of Ta_2O_5 Films Prepared by Magnetron Sputtering

作　　者：马志伟[1] 张铭[1] 王波[1] 严辉[1] 

机构地区：[1]北京工业大学材料科学与工程学院,北京100022

出　　处：《河南师范大学学报（自然科学版）》2007年第4期75-78,共4页Journal of Henan Normal University(Natural Science Edition)

基　　金：国家自然科学基金(90307014)

摘　　要：信息技术的发展提出了采用高k栅介质材料替代SiO2的需要.高介电Ta2O5薄膜的研究具有很强的应用背景.但是在实际应用中,漏电流较大成为Ta2O5的一个缺点.本文研究了磁控溅射方法制备Ta2O5薄膜时工作气压对于薄膜电学性能的影响.实验制备了不同工作气压的Ta2O5薄膜,测试了样品的粗糙度和绝缘性能,并对实验结果进行了分析.The development of information technology has the requirement of high-k constant materials＇ replacing SiO2. Ta2O5 high dielectric thin films have been used widely. However, the big leakage current in practical application is the disad-vantage of Ta2O5. In this paper, the effect of the working gas pressure on the electrical properties of Ta2O5 films prepared by magnetron sputtering is studied. Ta2O5 films are prepared at different working pressure. The roughness and insulation of thin films are tested. The experimental results are analyzed.

关 键 词：工作气压 磁控溅射 Ta2O5薄膜 电学性能 

分 类 号：TB43[一般工业技术]