类金刚石薄膜的制备及其电阻率、光谱特性研究  

Preparation,resistivity and spectrum of DLC thin films

作　　者：赵之明[1] 李合琴[1] 顾金宝[1] 

机构地区：[1]合肥工业大学材料科学与工程学院,安徽合肥230009

出　　处：《真空》2007年第6期48-51,共4页Vacuum

基　　金：安徽省自然科学基金(03044703)资助

摘　　要：采用射频磁控溅射法在单晶硅表面制备了类金刚石薄膜;对薄膜的电阻率进行了测量,研究了薄膜的溅射工艺参数,采用拉曼光谱、原子力显微镜、扫描电镜分析了薄膜的结构、表面形貌以及薄膜的截面形貌。结果表明,薄膜中含有sp2、sp3杂化碳原子,拉曼谱高斯拟合峰的ID/IG为3.67;薄膜的电阻率达6×103Ωcm。最佳溅射气压在0.4 Pa左右,最佳溅射功率在140 W左右;薄膜的表面平整光滑,平均粗糙度低达0.17 nm;SEM形貌表明薄膜由大量大小均匀的碳颗粒组成,薄膜内部十分致密,与基底结合很好。The Radio frequency （RF） magnetron sputtering process was used to deposit diamond like carbon （DLC） thin films on Si substrates, of which the favorable processing parameters and resistivity were studied. The microstructure, surface and sectional morphologies of thin films were investigated with Raman spectroscopy, AFM and SEM. The results showed that the films have sp^2 and sp^3 bonds, and a calculated ID/IG value 3.67 of the peaks of fitting Gaussian curves for Raman spectrum was obtained. The best working pressure and sputtering power are about 0.4Pa and 140W, respectively. The resistivity of the films comes up to 6×10^3 Ωcm. The surface of the films is flat and smooth and the average surface roughness of films is 0.17nm. The SEM image showed that the films is compact and composed of many homogeneous carbon particles and binding well with substrates.

关 键 词：类金刚石薄膜 电阻率 射频磁控溅射 拉曼光谱 

分 类 号：TB43[一般工业技术]