KOH蚀液的PN结自致蚀停技术研究  

STUDY ON TECHNIQUE OF PN JUNCTION ETCH-STOP IN KOH SOLUSION

作　　者：汤玉生[1] 沈志广[1] 戴庆元[1] 凌行[1] 颜景沪 徐秀琴 

机构地区：[1]上海交通大学微电子技术研究所,上海200030

出　　处：《微细加工技术》1997年第2期43-48,共6页Microfabrication Technology

摘　　要：KOH碱性蚀液的PN结自致蚀停电化学腐蚀技术是制备硅三维微结构的基本方法之一。本文详细研究了它在90℃的PN结自致蚀停的基本特性，并发展了一种简化的三电极系统。该新的系统既保持了双电极系统的简便性又具备四电极系统可防错误腐蚀终止的功能。新系统PN结偏置独立回路中的监测电流和电压均能给出明显的腐蚀终止指示。实验结果和分析表明，用这种新的系统或四电极系统进行微机械加工时．加工样品的PN结结面应和腐蚀窗口面积接近，才能确保腐蚀终止指示的明显化。The electrochemical etching technique of PN junction etch-stop in alkaline solution KOH is one of foundational methods of fabricating three-dimension silicon microstructures. It's main characteristics of PN junction etchstop under 90℃ have been studied and a simplified three-electrode system is developed. The system has both the simplicity in two-electrode system and the function avoiding uncorrect etchstop in four-electrode system. The measuring current and voltage in the PN junction loop all show etch-stop clearly. the experimental results and our analysis suggest that, when microstructures are fabricated by the system of four-electrode system,The PN junction area to be etched in the samples should be close to the etching-window area in order to make the indication of etch-stop clear.

关 键 词：硅微结构 电化学腐蚀 自致蚀停 

分 类 号：TN305.2[电子电信—物理电子学]