一种适用于互补双极技术的双层多晶硅自对准PNP晶体管的设计  

Design of a double poly-silicon self-aligned PNP transistor for C-bipolar technology

作　　者：李荣强[1] 谢正旺[1] 曾鹏[1] 

机构地区：[1]重庆邮电大学

出　　处：《重庆邮电大学学报（自然科学版）》2007年第6期669-673,共5页Journal of Chongqing University of Posts and Telecommunications(Natural Science Edition)

摘　　要：通过仿真与实验设计出了一种高性能的双层多晶硅自对准PNP晶体管工艺流程,分析了关键工艺技术,器件性能达到fT=8.5 GHz,β=60,BVCEO=8 V。该工艺与已有的双层多晶硅自对准NPN晶体管工艺相兼容,可用于制造高性能的互补双极电路。A high-performance double poly-silicon self-aligned PNP transistor process with .fT=8.5GHz,β-60 and BVCEO=8V is designed by simulations and experiments, and the key technologies are analyzed. The process is compatible to the existing double poly-silicon self-aligned NPN transistor process, which can be used to fabricale high-performance complementary bipolar circuits.

关 键 词：双层多晶硅 自对准 PNP 互补双极 

分 类 号：TN710.2[电子电信—电路与系统]