静电键合力引起硅微结构畸变的研究  

The Influence of Electrostatic Forces on Silicon Microstructures

作　　者：任建军[1] 陶盛[1] 沈绍群[1] 

机构地区：[1]复旦大学电子工程系

出　　处：《仪表技术与传感器》1997年第1期17-20,共4页Instrument Technique and Sensor

摘　　要：硅微机械力敏器件在封装时往往采用硅—玻璃静电键合的方法。但在静电键合时静电力也往往作用于不需要键合的结构部分。并可能引起这些结构的畸变，造成器件特性劣化或破坏。本文分析了静电力的这些影响。Silicon-glass electrostatic bonding has been widely used for structure forming and/or packaging of silicon mechanical sensors. However, significant electrostatic forces have unnecessarily and unavoidably been applied to non-bonding regions. These forces may deteriorate the performance or even damage the structure of sensors. In this paper, the electrostatic forces are analyzed and some practical solutions to the problem are proposed.

关 键 词：硅微结构 静电键合 传感器 力敏器件 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TN379[自动化与计算机技术—控制科学与工程]