应变SiGe层中本征载流子浓度的计算  

The Calcalation of the Intrinsic Carrier Concentration of Strained Si_(1-x)Ge_x Layers

作　　者：赵传阵[1] 唐吉玉[1] 文于华[1] 吴靓臻[1] 孔蕴婷[1] 

机构地区：[1]华南师范大学物理与电信工程学院,广州510006

出　　处：《固体电子学研究与进展》2007年第4期449-451,467,共4页Research & Progress of SSE

摘　　要：采用解析的方法研究了应变Si_(1-x)Ge_x层中本征载流子浓度n_i与Ge组分x、温度T、掺杂浓度N的定量依赖关系;拟合了价带有效态密度公式和重掺杂禁带变窄公式。发现在一定掺杂浓度下,本征载流子浓度随Ge组分的增加而变大,并且本征载流子浓度增加的速度越来越快。在一定Ge组分下,本征载流子浓度随掺杂浓度的增加而变大。随着掺杂浓度的增加,本征载流子浓度的增长速度变得越来越缓慢。In this paper, a model for the intrinsic carrier concentration is developed and the intrinsic carrier concentration is calculated analytically with the varying of the temperature T, Ge fraction x and doping concentration. In the model,The new reasonable formulas of valence band effective states and the band gap narrowing caused by heavy doping are gained. It is found that for the given doping concentration, the intrinsic carrier concentration becomes lager and larger with the varying of Ge fraction and the inceasing speed also becomes larger and larger. For the given Ge fraction x,the intrinsic carrier concentration becomes lager and larger with the varying of doping concentration but the inceasing speed becomes smaller and samller.

关 键 词：锗硅合金 应变 有效态密度 本征载流子浓度 掺杂浓度 

分 类 号：TN322.8[电子电信—物理电子学]