Pyrex玻璃的湿法深刻蚀及表面布线工艺  被引量:6

Pyrex glass wet deep etching and surface wiring

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作  者:许晓昕[1,2] 高翔[1,2] 徐静[1] 吴亚明[1] 

机构地区:[1]中科院上海微系统与信息技术研究所,传感技术国家重点实验室 [2]中科院研究生院,北京100039

出  处:《功能材料与器件学报》2007年第6期566-571,共6页Journal of Functional Materials and Devices

基  金:国家自然科学基金项目资助(No.60572022)

摘  要:高表面质量的pyrex玻璃对提高MEMS器件尤其是光学器件性能至关重要。本文采用TiW/Au+AZ4620厚胶作为多层复合刻蚀掩模,重点研究了玻璃湿法深刻蚀工艺中提高表面质量的方法,并分析了钻蚀和表面粗糙度产生的机理。结果表明,采用TiW/Au+AZA620厚胶的多层掩膜比TiW/Au掩膜能更有效地避免被保护玻璃表面产生针孔缺陷,减轻钻蚀。在纯HF中添加HCl,可以得到更光洁的刻蚀表面,当HF与HCl体积配比为10:1时,玻璃刻蚀面粗糙度由14.1nm减小为2.3nm。利用该工艺,成功实现了pyrex7740玻璃的150μm深刻蚀,保护区域的光学表面未出现钻蚀针孔等缺陷,同时完成了金属引线和对准标记的制作,为基于玻璃材料的MEMS器件制作提供了一种新的加工方法。The surface quality of Pyrex glass (Coming 7740 ) is crucial for the optical performance of MEMS devices. In this paper, a kind of deep wet etching process of pyrex glass using a multilayer etching mask of TiW/Au in combination with AZ4620 thick photoresist is experimentally studied. To obtain high quality etching glass surface, the main factors causing surface defects and roughness are analyzed. The etched results show that the multilayer mask used is more effective to eliminate the pinholes generated during deep etching, and the high quality surface is obtained by using hydrochloric acid as etching additive into hydrofluoric acid solution. The roughness of etched glass surface can be reduced from 14. lnm to 2.3nm (RMS), while HF (40%) and HC1(37% ) solutions are blended with a volumetric ratio 10:1. No pinholes have been observed on the glass surface after the developed etching process of a depth of 150μm. Since then, a novel fabrication process is accomplished to bond Cr/Au wires and alignment signs for MEMS devices.

关 键 词:微机电系统(MEMS) Pyrex玻璃 湿法刻蚀 表面质量 

分 类 号:O484.1[理学—固体物理]

 

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