SOI NMOS晶体管在高剂量的X射线与^(60) Coγ射线辐射作用下的背栅阈值电压漂移饱和效应的研究及比对  

Saturation of back-gate threshold voltage shift in SOI NMOS transistors at high total dose for X-ray and ^(60)Co irradiations

作　　者：田浩[1,2] 张正选[1] 张恩霞[1] 贺威[1,2] 俞文杰[1,2] 王茹[1,2] 

机构地区：[1]中国科学院上海微系统与信息技术研究所 [2]中国科学院研究生院,北京100039

出　　处：《功能材料与器件学报》2007年第6期599-603,共5页Journal of Functional Materials and Devices

摘　　要：利用标准SIMOX材料制作了部分耗尽环型栅NMOS晶体管,并在ON偏置条件下分别对其进行了10keV X射线及^(60)Coγ射线总剂量辐照实验。实验结果表明,在两种辐射条件下NMOS晶体管的背栅阈值电压漂移量都会随着辐照剂量的升高而趋于饱和。实验分析并研究了这种现象的机理,并发现在较低的辐照剂量下^(60)Coγ射线造成的背栅阈值电压漂移量较大,但在高剂量条件下X射线造成的漂移量将超过^(60)Coγ射线。Partially -depleted NMOS transistors with enclose -gate structure were fabricated on standard SIMOX substrate and tested using 10 -keV X -ray and ^60Co radiation sources respectively. The results show the effect of saturation of back - gate threshold voltage shift in NMOS transistors at high total dose, no matter under what irradiation. We have studied this effect and found that the back - gate threshold voltage shifts induced by ^60Coγrays is larger than that induced by X - rays at a lower total dose. However, the case is contrary at high total dose.

关 键 词：注氧隔离 绝缘体上硅(SOI) 总剂量辐射效应 MOS晶体管 

分 类 号：TB303[一般工业技术—材料科学与工程]