多孔型氧化铝薄膜在高密度封装中的应用及性能  

Application of porous anodic alumina film in high density packaging and its properties

作　　者：朱大鹏[1] 王立春[1] 罗乐[1] 

机构地区：[1]中科院上海微系统与信息技术研究所,上海200050

出　　处：《功能材料与器件学报》2007年第6期619-624,共6页Journal of Functional Materials and Devices

摘　　要：利用铝阳极氧化方法对微晶玻璃基板上的多层铝膜进行选择性氧化,制备了4层布线的高密度MCM-D基板,对氧化得到的多孔型氧化铝介质膜的绝缘及介电性能进行了研究。实验结果表明:多层布线铝与氧化铝结合性好,层间和同层多孔氧化铝绝缘电阻分别达到10~9Ω和10^(11)Ω以上;多孔型氧化铝的相对介电常数和损耗分别为5.73和0.022(1 MHz);导带、互连通孔与绝缘层所形成的层间通孔互连结构共面性好,具有良好的电互连性能。多孔型氧化铝介质膜适用于制备高密度MCM—D基板。Multi aluminum films on glass plate were selectively anodized to fabricate high density MCM - D （ multi - chip module deposition） substrate. The insulation property and the dielectric property of porous anodic alumina films were studied. The result shows that the cohesion between aluminum and porous alumina is good. The insulation resistance of interlayers and same layers were 10^9Ω and 10^11Ω respectively. The dielectric constant and the dissipation factor at 1MHz was 5.73 and 0.022. The conductive lines and vias and the insulation layers are coplanar. The interlayer vias have good electronic interconnection. The dielectric film of porous anodic alumina is suitable for MCM - D substrate fabrication.

关 键 词：多孔型氧化铝膜 高密度封装 绝缘性能 

分 类 号：TN305[电子电信—物理电子学]