高压n LDMOS漂移区的设计研究  

Design and investigations of HV-nLDMOS drift region

作　　者：宋李梅[1] 王文博[1] 杜寰[1] 夏洋[1] 

机构地区：[1]中科院微电子研究所,北京100029

出　　处：《功能材料与器件学报》2007年第6期635-639,共5页Journal of Functional Materials and Devices

基　　金：国家重点基础研究发展计划资助项目(No.2003CB314705)

摘　　要：讨论了漂移区长度及注入浓度等关键参数对于漏结击穿电压的影响,并详细分析了矩形版图结构的LDMOS器件中,远离沟道一侧的漂移区阱长度对于击穿特性的影响。分析了矩形版图结构的LDMOS器件中,远离沟道一侧的漂移区阱长度对于击穿特性的影响。运用RESURF技术对于高压LDMOS的漂移区进行设计和优化。研制出耐压170V的nLDMOSFET。并通过试验结果证明了分析的正确性。In this article, the effect of structural and electrical parameters, especially, the length of drift region well extended away from channel region for a rectangular layout LDMOS transistor, on breakdown voltage of drain junction were discussed. The drift region of high voltage nLDMOS device was designed and optimized by using RESURF technique. The nLDMOSFET with a breakdown voltage of 170V was fabricated. The experimental results are accordant with the simulation ones.

关 键 词：RESURF LDMOS 击穿电压 

分 类 号：TN386.1[电子电信—物理电子学]