基于陷阱的4H-SiC MESFET频散效应分析  

Study on Frequency Dispersion Effects of 4H-SiC MESFET Based on Traps

作　　者：邵科[1,2] 曹全军[1,2] 张义门[1,2] 张玉明[1,2] 孙明[1,2] 

机构地区：[1]西安电子科技大学微电子学院 [2]宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《微电子学》2007年第6期830-832,841,共4页Microelectronics

摘　　要：在建立正确模型的基础上,运用ISE软件的二维仿真,模拟了4H-SiC MESFET在交流小信号条件下,表面陷阱和体陷阱对跨导和漏电导随频率变化的影响。分析了产生频散效应的原因以及内部机理,同时考虑了不同环境温度对跨导的频散影响。结果表明,在低频条件下,陷阱会导致跨导和漏电导频散,漏电压越大,环境温度越高,频散越不明显。The influence of surface traps and body traps of 4H-SiC MESFET＇s on transconductance and drain conductance varying with frequency in the small AC signal was simulated by using two-dimensional simulation of ISE software. The reason for frequency dispersion and its mechanism were analyzed, considering simultaneously the influence of different ambient temperature on transconductance and drain conductance. Results show that the traps lead to frequency dispersion of transconductance and drain conductance at lower frequency, and the effects of frequency dispersion are not serious in the higher drain voltage and ambient temperature.

关 键 词：4H-SIC MESFET 陷阱 跨导 漏电导 频散 

分 类 号：TN304.24[电子电信—物理电子学]