硅基高长径比微孔列阵及其应用  

Si-based Microchannel Array with High Length-to-Diameter Ratio and Its Application

作　　者：李野[1] 向嵘[1] 王国政[1] 王新[1] 陈力[1] 付申成[1] 吴奎[1] 姜德龙[1] 端木庆铎[1] 田景全[1] 

机构地区：[1]长春理工大学理学院,长春130022

出　　处：《微电子学》2007年第6期862-865,共4页Microelectronics

摘　　要：介绍了硅基高长径比微孔列阵形成的多路感应耦合等离子体刻蚀和电化学刻蚀等半导体工艺技术,给出了实验系统、原理、方法和实验结果,指出了工艺中出现的新现象和亟待解决的新问题,阐述了其在二维通道电子倍增器-微通道板中的应用。Multiplex inductively coupled plasma and electrochemical etchings were used- to- form microchannel array with a high length-to-diameter ratio on Si wafer. The experiment system, principle and method were described, and experimental results were given. Some new phenomena and new problems associated with the technology were investigated. Applications of the microchannel array in 2-dimensional electron multiplier （microchannel plates） were discussed.

关 键 词：微孔列阵 长径比 微通道板 半导体工艺 

分 类 号：TN405.983[电子电信—微电子学与固体电子学]