存在集中分布界面态的异质结的C-V特性研究  

Capacitance-Voltage characterization of heterojunctions with the distribution of concentrated interface states

作　　者：张胜坤[1] 陆昉[1] 陈溪滢[1] 孙恒慧 

机构地区：[1]复旦大学物理学系,上海200433

出　　处：《复旦学报（自然科学版）》1997年第3期323-329,共7页Journal of Fudan University：Natural Science

基　　金：国家科委基础研究重大项目

摘　　要：提出用高频C－V法测量半导体异质结中集中分布的界面态的能级位置的方法，并分析了测试温度以及由异质结的能带偏移所引起的载流子积累对测试结果的影响．用这一方法对GaS／GaAs和Znse／GaAs两种异质结进行了测试，发现在这两种异质界面上均存在集中分布的界面态，其能级位置分别为Ec-0.41eV,Ec-0．51eV．In this paper, the capactitance induced by the interface defects at the heterojunction is theoretically analyzed and the high frequency C-V measurement is presented to obtainthe activation energies of concentrated interface defects. The effect of temperature is discussed. The influence on the experimental results which is caused by the carrier accumulation at the interfaCe due to band discontinuity is also considered. The interface defectsat GaS/GaAS and ZnSe/GaAs heterojunctions have been measured by this method.

关 键 词：异质结 高频C-V法 集中分布 界面态密度 

分 类 号：O471.5[理学—半导体物理]