基片温度对金刚石厚膜生长的影响  

Study on the influence of growth temperature on the deposition of diamond thick films by MPCVD

作　　者：熊礼威[1] 汪建华[1] 满卫东[1] 曹菊琴[1] 谢鹏[1] 

机构地区：[1]武汉工程大学湖北省等离子体化学与新材料重点实验室,湖北武汉430074

出　　处：《武汉工程大学学报》2008年第1期83-86,共4页Journal of Wuhan Institute of Technology

基　　金：湖北省科技攻关计划(2002AA105A02);湖北省高等学校优秀中青年科技创新团队资助计划项目

摘　　要：采用微波等离子体化学气相沉积(MPCVD)法制备了Φ60 mm的金刚石厚膜,通过对沉积过程和结果的观察发现,由于所用沉积气压较高,基片不同区域温度不均匀,导致不同区域沉积的金刚石厚膜晶型差距较大.通过对不同区域的结果进行比较,发现850℃为较好的沉积温度,并在对沉积工艺进行优化后,采用该温度在Φ60 mm的基片上制备了厚度为0.6 mm取向性很好的金刚石厚膜.Diamond thick film with a diameter of 60 millimeters was deposited by the method of Microwave Plasma Chemical Vapor Deposition （MPCVD）. Observation of the growth process and the deposited results showed that the temperature of the substrate was not well-proportioned because of the high pressure, and this resulted in the different surface morphology among the films deposited on different area of the substrate. The comparison among the deposited results of different areas showed that 850℃ was the optimal temperature for the deposition of high quality diamond thick films. The reason of these was analyzed and the deposition technique was optimized based on the discussion. Finally, a highly oriented diamond thick film with a thickness of 0.6 millimeter was deposited by the optimized technique.

关 键 词：化学气相沉积 金刚石厚膜 微波等离子体 

分 类 号：O484[理学—固体物理]