A Solar-Blind AlGaN-Based p-i-n Back-Illuminated Photodetector with a High Temperature AlN Template Layer  

高温AlN为模板的AlGaN基p-i-n背照式日光盲探测器(英文)

作　　者：邹泽亚[1] 杨谟华[1] 刘挺[2] 赵文伯[2] 赵红[2] 罗木昌[2] 王振[2] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054 [2]重庆光电技术研究所,重庆400060

出　　处：《Journal of Semiconductors》2008年第1期20-23,共4页半导体学报（英文版）

摘　　要：The growth, fabrication, and characterization of a solar-blind A1GaN-based p-i-n back-illuminated photodetector with a high temperature A1N template are reported for the first time. The photodetector was fabricated from multilayer AIx Gal-xN films grown by MOCVD on double-polished c-plane （0001） sapphire substrates. Crack free, high A1 content （0.7） A1GaN multilayer structure,designed for the solar-blind p-i-n back-illuminated photodetector,was grown on a high temperature A1N template without a nuclear layer. The high quality of the epitaxial layers is demonstrated by in-situ optical reflectance monitoring curve, triple-axis X-ray diffraction, and atomic-force microscope. At a 1.8V bias, the processed p-i-n photodetector exhibits a solar-blind photoresponse with a maximum responsivity of 0. 0864A/W at 270nm. The photodetector exhibits a forward turn-on voltage at around 3.5V and a reverse breakdown voltage above 20V, and the leakage current is below 20pA for 2V reverse bias.第一次报道了以高温AlN为模板层的AlGaN基p-i-n背照式日光盲探测器的制作和器件特性.利用MOCVD方法在(0001)面的蓝宝石衬底上生长了探测器的AlxGa1-xN多层外延材料.在无需核化层的高温AlN模板上生长了p-i-n背照式日光盲探测器的无裂纹高Al组分(0.7)AlGaN多层外延结构.利用在线反射监测仪、三轴X射线衍射及原子力显微镜表征了外延材料的晶体质量.在1.8V的反向偏压下,制作的探测器表现出了日光盲响应特性,在270nm处最大响应度为0.0864A/W.具有约3.5V的正向开启电压,大于20V的反向击穿电压,在2V的反向偏压下暗电流小于20pA.

关 键 词：solar-blind high temperature A1N template back-illuminated photodetector p-ion 

分 类 号：TN36[电子电信—物理电子学]