Ⅱ-Ⅵ族宽禁带蓝绿色发光器材料的MBE研究  

MBE Growth of Ⅱ Ⅵ Widegap Materials for Blue/Green Light Emitting Devices

作　　者：王善忠[1] 姬荣斌[1] 巫艳[1] 许颐璐[1] 郭世平[1] 何力[1] 

机构地区：[1]中国科学院上海技术物理研究所

出　　处：《电子显微学报》1997年第4期385-388,共4页Journal of Chinese Electron Microscopy Society

摘　　要：本文报道ＺｎＳｅ基ⅡⅥ族宽带发光材料分子束外延系统的建立、ｐ型掺杂用等离子体活性氮源的研制、两性掺杂的ＺｎＳｅ材料的生长。实验证明国产ＭＢＥ设备能够自洽生长优质ＺｎＳｅ单晶薄膜；用自制的等离子体活性氮源作受主掺杂剂，获得了ｐＺｎＳｅ单晶薄膜，经ＣＶ测量发现，［Ｎａ］［Ｎｄ］高达～５×１０１７·ｃｍ－３；用国产粉末状ＺｎＣｌ２源作施主掺杂剂，获得了ｎＺｎＳｅ单晶薄膜，Ｈａｌ测量表明［ｎ］高达～２３×１０１９·ｃｍ－３。生长速度均控制在～０５μｍ／ｈ。ZnSe based Ⅱ Ⅵ wide gap materials have attracted very much attention since the first demostration of a ZnSe based blue/green laser diode in the summer of 1991 by 3M Corporation.For years,this area has been making great progresses over the world. Still, it is noticed that in China such a interesting project is just on the start up phase and few results are reported. We report, in this paper, the foundation of a molecular beam epitaxy(MBE) system specially for the growth of ZnSe based Ⅱ Ⅵ widegap materials,the fabrication of a radiational frequency(r.f.) activated plasma nitrogen source for the p type doping of ZnSe based materials, and the growth of high quality p or n ZnSe layers. The experiments have proved that FW Ⅲ MBE system is suitable for the growth of p ZnSe crystal films with high quality. The p type ZnSe crystal films are available when our self made plasma active nitrogen source is used as the p doping source. It is found from the C V results that in p ZnSe is high up to ～5×10 17 ·cm -3 . Adopting ZnCl 2 powder as n type dopants, we obtain n type ZnSe crystal films in which the electron concentration is high up to ～2 3×10 19 ·cm -3 examined by Hall method. In all the round of growth, the growth rate is controlled around ～0 5μm/h.

关 键 词：分子束外延 蓝绿发光器 硫化锌 MBE 

分 类 号：TN304.25[电子电信—物理电子学] TN383.04