多离子束反应共溅射制备PbTiO_3铁电薄膜的微结构研究  

Research on Microstructure of Lead Titanate Thin Films Prepared by Multi Ion Beam Reactive Cosputtering

作　　者：彭文斌[1] 陈猛[1] 朱建国[1] 兰发华 肖定全[1] 

机构地区：[1]四川联合大学材料科学系

出　　处：《电子显微学报》1997年第4期449-450,共2页Journal of Chinese Electron Microscopy Society

摘　　要：本文利用多离子束反应共溅射装置，分别在Ｓｉ和ＭｇＯ衬底上原位制备了ＰｂＴｉ氧化物薄膜。研究表明，利用多离子束反应共溅射技术，可以显著降低薄膜后续热处理的温度；薄膜中焦绿石结构的消失温度与薄膜中Ｐｂ的含量有关；较之Ｓｉ衬底，在ＭｇＯ衬底上的薄膜较易获得好的晶体结构和优良的薄膜表面形貌。对所观察到的现象。In this paper, lead Titanate thin films were fabricated on Si(111) and MgO(100) by multi ion beam reactive cosputtering technique. By using this technique, we found that perovskite PT thin films appears at lower temperature, and the temperature at which pyrochlore phase disappears was connected with lead content, and the microstructure of PT thin films prepared on MgO was better than that on Si. These phenomena were interpreted according to thin films growth theory and the interaction between substrate and thin film.

关 键 词：多离子束 反应共溅射 铁电薄膜 半导体薄膜技术 

分 类 号：TN304.9[电子电信—物理电子学] TN304.055