硅片高温翘曲与常温机械强度  

Warpage at High Temperature and Mechanical Strength of Silicon Wafers

作　　者：谢书银[1] 石志仪[1] 陈忠祥 张维连[2] 

机构地区：[1]中南工业大学应用物理与热能工程系,长沙410083 [2]河北工业大学半导体材料研究所,天津300130

出　　处：《Journal of Semiconductors》1997年第9期710-713,共4页半导体学报（英文版）

基　　金：国家教委硅材料重点实验室基金

摘　　要：不同抗弯强度硅片高温弯曲度变化的实验结果表明，众多因素对抗弯强度和高温弯曲度的影响规律是一致的．高温翘曲度或弯曲度与抗弯强度有内在联系．抗弯强度不仅表示硅片在常温下的抗破碎能力，而且也反应了高温抗翘曲和弯曲能力．The relationship of the warpageat at high temperature and fie-cure strength of silicon wafers is studied by measurement of fie-cure strength and change of bowingness of silicon wafers after heat treatment. The laws of effect of various factors on warpage and fie-cure strength of silicon wafers are all the same. The fie-cure strength of silicon wafer can reflect its ability of anti-warping or bowing at high temperature to a certain degree.

关 键 词：硅片 高温翘曲 抗弯强度 实验 

分 类 号：TN304.12[电子电信—物理电子学] TN304.07