p-GaN表面制备低阻欧姆接触电极的几个关键问题  

Key factors in the preparation of low resistance ohmic contacts to p-GaN

作　　者：李鸿渐[1] 石瑛[1] 蒋昌忠[1] 

机构地区：[1]武汉大学物理科学与技术学院,湖北武汉430072

出　　处：《功能材料》2008年第1期6-8,11,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(10675094;10205010;10435060)

摘　　要：优良的光电特性使得GaN材料成为当今半导体器件研究领域的热点,但高功函数和低载流子浓度使p-GaN表面难以制备低阻欧姆接触电极、严重妨害了GaN基器件的热稳定性和输出功率。如何制备具有低阻欧姆接触特性的p-GaN电极已成为一个关键的科学和技术问题。探讨了影响p-GaN欧姆接触特性的几个关键因素,如表面预处理工艺、电极材料的选择和厚度、退火工艺等,对此方面的最新进展进行评述和归纳,并提出自己的创新性研究思路。Low resistance ohmic contacts to p-GaN are essential for the realization of GaN-based optoelectronic devices such as white light emitting diodes （LED＇ s） with large power. However, the difficulty in achieving reliable low contact resistivity on p-GaN has affected seriously the output power and thermal stability of such devices. In this paper, key factors （e. g. surface treatment, choice of electrode materials and thickness, thermal annealing） in making low resistance ohmic contacts to p-GaN are discussed. The latest research progresses in this area are classified and some novel research ideas are put forwarded by us.

关 键 词：P-GAN 欧姆接触 表面处理 退火 电阻率 

分 类 号：O472[理学—半导体物理]