氨化Si基Ga_2O_3/V薄膜制备GaN纳米线  

Fabrication of GaN nanowires by ammoniating Ga_2O_3 film on V layer deposited on Si(111) substrates

作　　者：杨兆柱[1] 薛成山[1] 庄惠照[1] 王公堂[1] 秦丽霞[1] 李红[1] 陈金华[1] 黄英龙[1] 张冬冬[1] 

机构地区：[1]山东师范大学半导体所,山东济南250014

出　　处：《功能材料》2008年第1期143-144,147,共3页Journal of Functional Materials

基　　金：国家自然科学基金重大研究计划资助项目(90201025);国家自然科学基金资助项目(90301002)

摘　　要：为了制备高质量的GaN纳米结构,采用磁控溅射技术先在硅衬底上制备Ga2O3/V薄膜,然后在流动的氨气中进行氨化反应,成功制备出GaN纳米线。采用X射线衍射(XRD)、傅里叶红外吸收光谱(FTIR)、扫描电子显微镜(SEM)和透射电子显微镜(TEM)对样品进行分析。研究结果表明,采用此方法得到了六方纤锌矿结构的GaN纳米线,且900℃时制备的纳米线质量最好,直径在60nm左右,长度达到十几微米。To gain the high-guality GaN nanostructure, GaN nanowires were successfully prepared on the Si （111） substrates through ammoniating Ga2O3/V thin films deposited by magnetron sputtering. These GaN nanowlres were characterized by X-ray diffraction （XRD）, fourier transformed infrared （FTIR） spectroscopy, scanning electron microscopy （SEM） and transmission electron microscopy （TEM） . The results indicated that these nanowires were hexagonal GaN single crystals. The high-quality nanowires were prepared at 900℃ with the average diameter around 60nm and the length ranging up to 10μm.

关 键 词：磁控溅射 GAN V 纳米线 

分 类 号：TN304[电子电信—物理电子学]