应用于FRAM的集成铁电电容的研究  

Study on Integrated Ferroelectric Capacitors Applied to FRAM

作　　者：蔡道林[1] 李平[1] 张树人[1] 翟亚红[1] 阮爱武[1] 刘劲松[1] 陈彦宇[1] 欧阳帆[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《压电与声光》2008年第1期42-44,共3页Piezoelectrics & Acoustooptics

基　　金：国家重点基础研究发展计划("九七三"计划)基金资助项目(51310z)

摘　　要：集成铁电电容的制备是铁电存储器的关键工艺之一。该文采用射频(RF)磁控溅射法在Pt/Ti/SiO2/Si制备Pb(Zr,Ti)O3(PZT)薄膜,上下电极Pt采用剥离技术工艺制备,刻蚀PZT薄膜,形成Pt/PZT/Pt/Ti/SiO2/Si集成电容结构,最后高温快速退火。结果表明,这种工艺条件可制备性能良好的铁电电容,符合铁电存储器对铁电电容的要求。To fabricate the ferroelectric memory, one of the key processes is to prepare the integrated ferroelectric capacitors. PZT thin film was deposited on Pt/Ti/SiOz/Si substrate by RF magnetron sputtering. The Pt bottom/top electrodes of the ferroelectric memory were made by lift-off technology, and then PZT thin film was etched by wet etching in this paper. The integrated capacitors with Pt/PZT/Pt/Ti/SiO2/Si structure were formed. The capacitors were crystallized through high temperature rapid annealing. The results showed that the integrated PZT thin film capacitors with high quality could be obtained successfully by this process and applied for ferroelectric memory.

关 键 词：铁电电容 Pb(Zr Ti)O3(PZT)薄膜 铁电存储器 

分 类 号：TN384[电子电信—物理电子学]