氢钝化对硅纳米晶发光强度的影响  

Effect of Hydrogen Passivation on Photoluminescence Intensity of Si Nanocrystals

作　　者：陈恩光[1] 衣立新[1] 王申伟[1] 刘尧平[1] 苏梦蟾[1] 唐莹[2] 王永生[1] 

机构地区：[1]北京交通大学光电子技术研究所,发光与光信息技术教育部重点实验室,北京100044 [2]北京交通大学物理系,北京100044

出　　处：《光谱学与光谱分析》2008年第2期246-248,共3页Spectroscopy and Spectral Analysis

基　　金：国家“973”计划(2003CB314707);国家自然科学基金项目(60577022,10434030);教育部留学回国人员基金项目(2005383);北京交通大学科技基金项目(LI2005J0070,2003RC058)资助

摘　　要：通过热蒸发方法在单晶硅衬底上沉积了SiO/SiO2超晶格样品,在氮气保护下对样品进行高温退火,得到硅纳米晶/SiO2超晶格结构。随后将该结构样品分别注入3.0×1014和3.0×1015cm-2两种剂量的H+。通过对样品的光致发光光谱的分析发现,H+注入后未经过二次退火的样品发光强度急剧下降;二次退火后的样品,随着退火温度的升高,发光强度逐渐增强;注入足够剂量的H+,其发光强度可以远远超过未注入时的发光强度。研究表明,样品发光强度的变化取决于样品内部缺陷面密度的改变,而缺陷面密度是由氢离子的注入剂量和注入后再退火的温度等因素决定的。SiO/SiO2 superlattices samples were prepared on Si substrates by reactive evaporation of SiO powder in vacuum or an oxygen atmosphere. The samples were annealed in nitrogen atmosphere at high temperature subsequently. And then, H^＋ with a dose of 3. 0×10^14·cm^-2 and 3.0 ×10^15·cm^-2 respectively was implanted into these samples with formed Si nanocrystals at 20 keV. The PL spectra showed that the PL intensities of samples with H^＋ implanting dropped sharply compared with the samples without H^＋ implanting. The PL intensity increased gradually with increasing re-annealing temperature; and it even could exceed that of samples without H^＋ implanting if the dose of H^＋ was enough. Our further investigations showed that the varieties of the PL intensities were mainly dependent on the area density of the defects formed in the samples, and also the area density of the defects was influenced by the dose of H^＋ and the further re-annealing temperatures.

关 键 词：超晶格 硅纳米晶 氢钝化 

分 类 号：O472.3[理学—半导体物理]