ZnO压电薄膜的生长与应用  

Growth and application of zinc oxide piezoelectric thin film

作　　者：孙宏明[1] 郭航[1] 

机构地区：[1]厦门大学萨本栋微机电研究中心,厦门361005

出　　处：《功能材料与器件学报》2008年第1期258-262,共5页Journal of Functional Materials and Devices

基　　金：厦门大学引进人才科研启动基金资助

摘　　要：本文实验研究了ZnO压电薄膜的生长与表征,运用XRD和SEM测试了磁控溅射生长的ZnO压电薄膜的C轴择优取向生长情况和晶粒质量,比较了Si、覆盖在Si基底上的Al薄膜和SixNy薄膜三种材料衬底以及退火处理对ZnO薄膜的结晶质量的影响。还开发了仍然采用Al作为底电极但用一层SixNy薄膜与ZnO层隔离的MEMS压电器件的微制造工艺,以满足生长高质量的ZnO压电薄膜并与CMOS工艺兼容的要求。This paper presents the growth and characterization of zinc oxide piezoelectric thin film. In this paper, we studied the influence of annealing process and different substrates, including silicon, aluminum layer and silicon nitride thin film on silicon, on the piezoelectric performance of ZnO thin film by using XRD and SEM to analyze C - axis orientation and crystalline quality of ZnO thin film using magnetron sputtering technology. Then we develop a fabrication process, for which the aluminum is still used as the bottom electrode but isolated from the ZnO thin film by a layer of silicon nitride thin film, to meet the requirements of the quality of the ZnO thin film growth and the compatibility with CMOS technology.

关 键 词：ZNO薄膜 磁控溅射 退火 XRD MEMS器件 

分 类 号：TB383[一般工业技术—材料科学与工程]