PECVD低温制备微晶硅薄膜的研究  

Study on the Microcrystalline Silicon Films by PECVD at Low Temperature

作　　者：马康[1] 王海燕[1] 吴芳[1] 卢景霄[1] 郜小勇[1] 陈永生[1] 

机构地区：[1]郑州大学材料物理教育部重点实验室,郑州450052

出　　处：《人工晶体学报》2008年第1期97-101,共5页Journal of Synthetic Crystals

基　　金：国家重点基础研究发展规划(973)项目(No.2006GB202601)

摘　　要：实验采用等离子体增强化学气相沉积(PECVD)法在玻璃衬底上制备了微晶硅薄膜。研究了氢稀释比、衬底温度、射频功率等因素对薄膜晶化的影响,得出在一定范围内随着衬底温度的升高、射频功率和氢稀释比的增大,薄膜的晶化率得到提高;但进一步提高沉积温度、射频功率反而会使薄膜晶化效果变差,并对晶化硅薄膜低温生长的机理进行了初步的探讨。Microcrystalline silicon thin films using the PECVD method were deposited on common glass substrates at low temperature. The effect of the hydrogen dilution ratio, substrate temperature and discharge power on crystalline condition was studied. The results show that in a certain extent with the increase of substrate temperature, discharge power and hydrogen dilution ratio, the crystalline volume fraction is enhanced. We also discussed the growth mechanism of the microcrystalline silicon thin films from the aspect of surface reaction and space reaction.

关 键 词：PECVD 微晶硅薄膜 晶化率 生长机制 

分 类 号：O484[理学—固体物理]