Cu金属化系统双扩散阻挡层的研究  

Study on Double Diffusion Barriers of Cu Metallization

作　　者：王晓冬[1] 吉元[2] 钟涛兴[2] 李志国[3] 夏洋[4] 刘丹敏[2] 肖卫强[2] 

机构地区：[1]中国人民武装警察部队学院基础部,河北廊坊065000 [2]北京工业大学固体微结构与性能研究所,北京100022 [3]北京工业大学电子信息与控制工程学院,北京100022 [4]中国科学院微电子中心,北京100029

出　　处：《微纳电子技术》2008年第3期179-182,共4页Micronanoelectronic Technology

基　　金：国家自然科学基金重点资助项目(69936020)

摘　　要：采用二次离子质谱仪(SIMS)测试了SiON和Ta双层扩散阻挡层及Ta扩散阻挡层的阻挡性能;采用X射线衍射仪(XRD)测量了沉积态有Ta阻挡层和无阻挡层Cu膜的晶体学取向结构;利用电子薄膜应力测试仪测量了具有双层阻挡层Cu膜的应力分布状况。测试结果表明,双阻挡层中Ta黏附层有效地将Cu附着于Si基片上,并对Cu具有一定的阻挡效果,而SiON层则有效地阻止了Cu向SiO2中的扩散。与Ta阻挡层相比,双阻挡层具有较好阻挡性能。有Ta阻挡层的Cu膜的{111}织构明显强于无阻挡层的Cu膜。离子注氮后,薄膜样品应力平均值为206MPa;而电镀Cu膜后,样品应力平均值为-661.7MPa。The barrier performances of double barriers with SiON and Ta layers and Ta barriers were tested by using second ion mass spectrometry （SIMS） . Crystallography orientation structures of Cu films with and without Ta barriers were studied by using X-ray diffraction （XRD） . The stress distribution of Cu films with double barriers was measured by the stress distribution test instrument. Cu films have a good adhesion to the Si substrate according to Ta adhesion layers which countercheck Cu in part and SiON layers avoid Cu into SiO2 availably. Comparing with Ta barriers, the double barriers have preferable barrier performance. Cu films with Ta barriers have a strong （111） texture and a weak （111） texture is in Cu films without Ta barriers. Specimens are under 206 MPa after ion implantation, and -661.7 MPa exists in samples after electroplating Cu films.

关 键 词：CU互连 氮氧化硅 钽 扩散阻挡层 二次离子质谱仪 X射线衍射仪 

分 类 号：TG146.11[一般工业技术—材料科学与工程] TN405.97[金属学及工艺—金属材料]