Effects of in situ Annealing on Optical and Structural Properties of GaN Epilayers Grown by HVPE  

原位退火对HVPE生长的GaN外延层光学性质和结构的影响(英文)

作　　者：段铖宏[1] 邱凯[1] 李新化[1] 钟飞[1] 尹志军[1] 韩奇峰[1] 王玉琦[1] 

机构地区：[1]中国科学院材料物理重点实验室,合肥230031

出　　处：《Journal of Semiconductors》2008年第3期410-413,共4页半导体学报（英文版）

摘　　要：Effects of in situ annealing on the structural and optical properties of Gallium nitride （GaN） layers grown on （0001） sapphire by hydride vapor phase epitaxy （HVPE） are studied. The properties of GaN epilayers are improved by insitu annealing at growth temperature under ammonia （NH3） atmosphere. X-ray diffraction （XRD） analysis shows that the full width at half maximum （FWHM） of the rocking curves narrows as the annealing time increases. Raman scattering spectroscopy shows that E2 （high） peak positions shift to the low frequency region. Compared to without annealing and epilayers annealed with bulk GaN,the E2 （high） peak position of epilayers becomes closer to that of bulk GaN as the in situ annealing time increases. The biaxial compressive stress decreases after in situ annealing. Photoluminescence （PL） examination agrees well with XRD and Raman scattering analyses. These results suggest that the optical and structural properties of GaN epilayers can be improved by in situ annealing.研究了原位退火对用氢化物外延方法在(0001)面蓝宝石衬底上生长的氮化镓(GaN)外延薄膜的结构和光学性能的影响.测试表明,氨气气氛下在生长温度进行的原位退火,明显提高了GaN外延膜的质量.X射线衍射(XRD)分析表明,随着原位退火时间的增加,(0002)面和(1012)面摇摆曲线的半峰宽逐渐变窄.喇曼散射谱显示样品退火后E2(high)峰位向低频区移动;随着退火时间的延长,趋向于块状GaN的峰位.可见,原位退火使GaN外延膜中的双轴应力明显减少.光致发光的测试结果与XRD和喇曼散射谱的结论一致.表明原位退火能有效提高GaN外延膜的结构和光学性能.

关 键 词：GAN in situ annealing HVPE 

分 类 号：TN304.054[电子电信—物理电子学]