具有场板结构的AlGaN/GaN HEMT的直流特性  

DC Characteristics of AlGaN/GaN HEMTs with a Field Plate Gate

作　　者：魏珂[1] 刘新宇[1] 和致经[2] 吴德馨[1] 

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》2008年第3期554-558,共5页半导体学报（英文版）

基　　金：国家重点基础研究发展计划(批准号:2002CB311903;G20000683);中国科学院重点创新(批准号:KGCX2-SW-107)资助项目~~

摘　　要：研制成功具有场板结构的AlGaN/GaN HEMT器件,对源场板、栅场板器件的性能进行了分析.场板的引入减小了器件漏电和肖特基漏电,提高了肖特基反向击穿电压.源漏间距4μm的HEMT的击穿电压由常规器件的65V提高到100V以上,肖特基反向漏电由37μA减小到5.7μA,减小了一个量级.肖特基击穿电压由常规结构的78V提高到100V以上.另外,还初步讨论了高频特性.This paper reports two kinds of AlGaN/GaN HEMTs with the field plate gate. In contrast with a conventional HEMT structure,their DC characteristics are improved and the broken voltage is over 100V. The reverse leakage current of the Schottky gate is reduced from 0. 037 to 0. 0057mA with a 100V voltage between gate and drain using a field plate. Its broken voltage is increased from 78 to over 100V. The HEMTs with the gate field plate structure and the source field plate structure are compared and their high frequency characteristics are also discussed.

关 键 词：ALGAN/GAN 高迁移率晶体管 肖特基特性 击穿电压 场板结构 

分 类 号：TN386[电子电信—物理电子学]