隐埋层中二维效应对全耗尽SOI非对称HALO结构阈值电压的影响  

Impact of Two-Dimension Effects on Threshold Voltage of Fully Depleted SOI MOSFETs with Asymmetric Halos

作　　者：许剑[1] 丁磊[1] 韩郑生[2] 钟传杰[1] 

机构地区：[1]江南大学信息工程学院,无锡214000 [2]中国科学院微电子研究所,北京100029

出　　处：《Journal of Semiconductors》2008年第3期559-562,共4页半导体学报（英文版）

摘　　要：在非对称HALO结构的全耗尽SOI二维阈值电压解析模型的基础上,对阈值电压受隐埋层中二维效应的影响进行了讨论.通过与一维模型的比较,说明在深亚微米SOI MOSFET器件中隐埋层的二维效应会导致器件提前出现短沟道效应.新模型结果与二维数值模拟软件MEDICI吻合较好.Based on an analytical threshold voltage model of fully depleted silicon-on-insulator （SOI） MOSFETs with asymmetric HALO structures,the impact of the two-dimension effects in a buried-oxide layer on threshold voltage is discussed. Compared to the 1D model,two-dimensional effects in the buried-oxide layer of the deep submicron MOSFET device create the short-channel effect more quickly. The predictions of the new model are in good agreement with those of the two-dimension numerical simulator MEDICI.

关 键 词：阈值电压 二维效应 全耗尽SOI HALO结构 

分 类 号：TN386[电子电信—物理电子学]