一维阵列MSM 4H-SiC紫外光电探测器的研制  

Fabrication of 4H-SiC MSM Photodiode Linear Arrays

作　　者：杨伟锋[1] 蔡加法[1] 张峰[1] 刘著光[1] 吕英[1] 吴正云[1] 

机构地区：[1]厦门大学物理系,厦门361005

出　　处：《Journal of Semiconductors》2008年第3期570-573,共4页半导体学报（英文版）

摘　　要：采用Ni/Au作为肖特基接触制备了一维阵列MSM4H-SiC紫外光电探测器,并测量和分析了阵列器件的I-V、光谱响应特性.结果表明,阵列探测器性能均匀性好,击穿电压均高于100V.阵列中单器件暗电流小,在偏压为20V的时候,最大暗电流均小于5pA(电流密度为5nA/cm2),光电流比暗电流高3个数量级以上.其光谱响应表明,单器件在电压为20V时的响应度约为0.09A/W,比400nm时的比值均大5000倍,说明探测器具有良好的紫外可见比.Metal-semiconductor-metal （MSM） photodetector linear arrays of 40 pixels based on 4H-SiC,in which nickel Schottky contacts are used, are designed, fabricated,and characterized. Current-voltage and spectral responsivity measurements are carried out at room temperature. The linear arrays show uniform performances, including responsibility, breakdown voltage, and low leakage cur- rent. The breakdown voltage of the unit is beyond 100V. The detector shows a peak responsivity of about 0.09A/W, a dark current smaller than 5pA at 20V, and a displayed peak response wavelength at 290nm. The ratio of responsivity at 290nm to that of at 400nm is more than 5000, implying that the photodetector has an improved visible blind performance.

关 键 词：4H-SIC 金属-半导体-金属 一维阵列 响应度 

分 类 号：TN23[电子电信—物理电子学]