ICP刻蚀p-GaN表面微结构GaN基蓝光LED  

GaN-based Blue LEDs With Microstructure on p-GaN Surface Formed by Inductively Coupled Plasma Etching

作　　者：张贤鹏[1] 韩彦军[1] 罗毅[1] 薛小琳[1] 汪莱[1] 江洋[1] 

机构地区：[1]清华大学电子工程系集成光电子学国家重点实验室,北京100084

出　　处：《半导体光电》2008年第1期6-9,15,共5页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(60536020;60390074);国家"973"计划项目(2006CB302801;2006CB302804;2006CB302806;2006CB921106);国家"863"计划项目(2006AA03A105);北京市科委重大计划资助项目(D0404003040321)

摘　　要：采用基于Cl2/Ar/BCl3气体的感应耦合等离子体(ICP)刻蚀技术制作了p-GaN表面具有直径3μm、周期6μm的二维圆孔微结构GaN基蓝光LED,研究了刻蚀深度对光荧光(PL)和发光二极管(LED)光电特性的影响。结果表明,刻蚀深度为25 nm的表面微结构,与传统平面结构相比,其PL增强了42.8%;而采用ITO作为透明电极的LED,在20 mA注入电流下,正面出光增强了38%、背面出光增强了10.6%,同时前向电压降低了0.6 V,反向漏电流基本不变。A GaN-based light-emitting diodes with 3 μm hole diameter and 6 μm period 2- dimentional micro structural on p-GaN surface were fabricated by using inductively coupled plasma dry etching with Cl2/Ar/BCl3. The effects of the etching depth on photoluminescence and LED device characterizations were studied. The results show that the PL intensity of the LED with 25 nm deep microstructure on p-GaN surface was enhanced by 42.8%. compare to that of the traditional flat surface LED. Using ITO as the p-electrode, the LED＇s top and bottom emitting light intensity at 20 mA injection current was increased about 38% and 10.6% separately, while the working voltages was reduced by 0.6 V and the reverse leakage current remained contstant.

关 键 词：氮化镓基发光二极管 表面微结构 ICP干法刻蚀 湿法腐蚀 

分 类 号：TN383[电子电信—物理电子学]