基于GaN材料p型掺杂的研究进展  

Research Progress Based on GaN Material p-type doped

作　　者：刘一兵[1] 黄新民[1] 刘安宁[2] 肖宏志 

机构地区：[1]湖南大学电气与信息工程学院,湖南长沙410082 [2]邵阳职业技术学院机电工程系,湖南邵阳422000

出　　处：《红外技术》2008年第3期146-149,共4页Infrared Technology

基　　金：邵阳职业技术学院2008年重点科研项目

摘　　要：GaN材料作为第三代半导体材料己成为短波长光电子器件及高频、高压、高温微电子器件制备的最优选材料,而难以获得高质量的p型GaN成为阻碍GaN器件进一步发展和应用的重要原因。介绍了p型掺杂存在的问题,讨论了p型掺杂的激活方法和机理,综述了目前p型掺杂国内外的研究进展情况,最后指出了今后的研究方向。As the third generation semiconductors material, GaN has become the most optimal material of the short wave length photoelectron component and high frequency, high pressure, high temperature micro electron component preparing, but it is difficult to obtaining the high grade p-type GaN which will become to effect on GaN component development and application. The p-type doped problem is introduced, and its activation method and principle are discussed, the p-type doped research progress is presented, finally the next research direction is pointed out.

关 键 词：GAN P型掺杂 退火 激活 机理 

分 类 号：TN213[电子电信—物理电子学]