氮化硼薄膜的红外光谱研究  

IR Spectra Characteristics of Boron Nitride Thin Films

作　　者：邓金祥[1] 王瑶[1] 张晓康[2] 周涛[1] 汪旭洋[1] 姚倩[1] 陈光华[3] 

机构地区：[1]北京工业大学应用数理学院,北京100022 [2]兰州大学物理学院,兰州730000 [3]北京工业大学材料学院,北京100022

出　　处：《光散射学报》2008年第1期56-59,共4页The Journal of Light Scattering

基　　金：北京市自然科学基金资助项目(项目编号:4072007);国家自然科学基金资助项目(项目编号:60376007);北京市属市管高等学校人才强教计划资助项目

摘　　要：用磁控溅射法制备六角氮化硼薄膜,在衬底温度、衬底偏压、工作气压等条件一定的情况下改变工作气体(氮气+氩气)中氮气的比例,以制备高质量的六角氮化硼薄膜,薄膜以红外吸收光谱标识。实验结果表明,工作气体中氮气的比例对制得的六角氮化硼薄膜有很大影响,在氮气比例为20%时得到理想的六角氮化硼薄膜。Boron nitride thin films were deposited by RF magnetron sputtering. The content of N2 in working gas （N2/N2 ＋ Ar） was changed and that substrate temperature, substrate bias, working gas pressure and as well other conditions were definite. The Boron nitride films were characterized by IR Spectra. The research shows that the content of N2 in working gas was an important factor that affected the quality of Boron Nitride films. Hexagonal boron nitride films with high quality were deposited at 20 % of the content of N2 in working gas.

关 键 词：氮化硼薄膜 红外光谱 氮气比例 

分 类 号：O433[机械工程—光学工程]