常压固相烧结法制备ZAO靶材及其性能的研究  

Preparation and Properties of ZAO Ceramic Targets by Conventional Solid-state Reaction Method

作　　者：刘心宇[1] 李海麒[1] 江民红[1] 

机构地区：[1]桂林电子科技大学信息材料科学与工程系

出　　处：《湖南科技大学学报（自然科学版）》2008年第1期27-30,共4页Journal of Hunan University of Science And Technology：Natural Science Edition

基　　金：广西高校百名中青年学科带头人资助计划项目(RC20060809014)

摘　　要：采用常压固相烧结法,通过优化烧结工艺,制备出平整、组织均匀、致密的ZAO靶材.研究了掺杂含量、烧结温度对陶瓷靶材微观结构和性能的影响,并使用自制靶材,采用射频磁控溅射法镀膜.结果表明:Al2O3的掺杂没有破坏ZnO晶体结构,Al原子对Zn原子进行有效替位;晶粒尺寸随着掺杂量的增多而减小;靶材的电阻率随掺杂量的增加呈U型变化,在3wt%时取得最小值4.2×10-2Ω.cm;靶材致密度超过96%.使用该靶材生长的多晶ZAO薄膜具有(002)择优取向,结晶均匀,呈柱状生长,薄膜电阻率和可见光平均透射率可分别达到8×10-4Ω.cm～9×10-4Ω.cm和85%.图9,表1,参14.ZAO ceramic targets were fabricated by conventional solid-state reaction method and ZAO transparent conducting films were prepared by RF magnetron sputtering. Influence of sintering temperatures and different content of Al2O3 on mierostrueture as well as properties of ZAO target were investigated. The analyses ：indicated that ZAO targets are wurtzite-type polycrystalline structure. The grain size decreased rapidly due to the replacement of A1^3＋ for Zn^2＋. The resistivity of the samples decreased to a minimum of 4.2×10^-2Ω·cm and then increased again with the increase of Al2O3 contents. The relative density of targets exceeded 96%. The crystallinity of the films is improved and the columnar crystalline growth becone dominant. Electrical resistivity is as low as 8×10^-4 ～9×10^-4 Ω·cm and optical transmittance could reach up to 85% in visible range.

关 键 词：ZAO薄膜 陶瓷靶材 微观结构 

分 类 号：TB43[一般工业技术] TB34