InAs自组织生长量子点的电子俘获势垒  

ELECTRON CAPTURE BARRIER OF SELF ORGANIZED InAs QUANTUM DOTS

作　　者：陈枫[1,2] 封松林[1,2] 杨锡震 王志明[1,2] 汪辉[1,2] 邓元明 

机构地区：[1]中国科学院半导体所半导体超晶格国家重点实验室 [2]北京师范大学物理系

出　　处：《红外与毫米波学报》1997年第4期241-244,共4页Journal of Infrared and Millimeter Waves

基　　金：国家攀登计划;国家自然科学基金

摘　　要：成功地用深能级瞬态谱（ＤＬＴＳ）研究了ＩｎＡｓ自组织生长的量子点电学性质，获得２．５原子层ＩｎＡｓ量子点电子基态能级在ＧａＡｓ导带底下约０．１３ｅＶ，该量子点在荷电状态发生变化时伴随有晶格弛豫，对应俘获势垒为０．３２ｅＶ．本工作也证明可以把量子点类比深中心进行研究．Deep level transient spectroscopy (DLTS)was applied successfully to characterize the electric properties of self organized InAs quantum dots.The energy of the ground state of 2.5 ML InAs quantum dots was obtained at about 0.13eV below the bottom of the conduction band of bulk GaAs,and there occurred the lattice relaxation associated with the change of charge state of quantum dots.The corresponding capture barrier energy of such dots for electrons is about 0.32eV.This work shows that the electric characteristics of quantum dots behave somewhat like deep centers and can be investigated by using deep level investigation methods.

关 键 词：量子点 DLTS 自组织生长 砷化铟 电子俘获势垒 

分 类 号：TN304.23[电子电信—物理电子学] O471.1[理学—半导体物理]