热丝法制备纳米晶硅薄膜结构及沉积机制的研究  

INVESTIGATION OF GROWTH MECHANISM OF NANOCRYSTALLINE SILICON THIN FILMS PREPARED BY HOT FILAMENT CHEMICAL VAPOR DEPOSITION

作　　者：陈国[1,2] 郭晓旭[1,2] 朱美芳 孙景兰[1,2] 许怀哲 韩一琴 

机构地区：[1]中国科学技术大学研究生院物理系 [2]半导体超晶格国家重点实验室

出　　处：《物理学报》1997年第10期2015-2022,共8页Acta Physica Sinica

基　　金：国家自然科学基金

摘　　要：用热丝法制备了纳米晶硅薄膜．通过Ｒａｍａｎ散射谱及Ｘ射线谱，系统地研究了沉积气压Ｐｇ、高Ｈ２稀释及衬底与钨丝之间距离对沉积速率、纳米硅薄膜的形成和结构等的影响．计算了沉积过程中的温度场分布．讨论了沉积过程中反应基元的输运和相关的气相反应，以及Ｈ在薄膜生长中的作用，由此分析了沉积参量对薄膜结构的影响，得到了与实验相一致的结果．The nc Si∶H thin films were prepared by hotfilament vapor deposition.The effect of gas pressure, high H 2 dilution and substrate to filament distance on deposition rate,the formation and structure of nc Si∶H films was systematically studied.The structure of nc Si∶H was determined using Raman scattering and X ray diffraction.The temperature distribution was calculated;the travel of radicals evaporated from the filament and the gas phase reaction were discussed in detail.The results were in agreement with the measurement.

关 键 词：热丝法 纳米晶 硅 薄膜结构 沉积 

分 类 号：TN304.12[电子电信—物理电子学] TN304.05