金属氧化物半导体场效应管热载流子退化的1/f~γ噪声相关性研究  

Research on correlation of 1/f~γ noise and hot carrier degradation in metal oxide semiconductor field effect transistor

作　　者：刘宇安[1] 杜磊[2] 包军林[3] 

机构地区：[1]井冈山学院数理学院,吉安343009 [2]西安电子科技大学技术物理学院,西安710071 [3]西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《物理学报》2008年第4期2468-2475,共8页Acta Physica Sinica

摘　　要：研究了金属氧化物半导体(MOS)器件在高、中、低三种栅压应力下的热载流子退化效应及其1/fγ噪声特性.基于Si/SiO2界面缺陷氧化层陷阱和界面陷阱的形成理论,结合MOS器件1/f噪声产生机制,并用双声子发射模型模拟了栅氧化层缺陷波函数与器件沟道自由载流子波函数及其相互作用产生能级跃迁、交换载流子的具体过程.建立了热载流子效应、材料缺陷与电参量、噪声之间的统一物理模型.还提出了用噪声参数Sfγ表征高、中、低三种栅应力下金属氧化物半导体场效应管抗热载流子损伤能力的方法.根据热载流子对噪声影响的物理机制设计了实验并验证这个模型.实验结果与模型符合良好.Metal oxide semiconductor field effect transistor （MOSFET） in high-, mid- and low-gate stresses of hot carrier degradation effect and its 1/f ^y noise feature are studied. Based on the formation theories of interface traps and oxide traps in Si-SiO2 and the MOSFET 1/f^y noise mechanism, the process of exchange carrier between the defect in gate oxide and the free-carrier in the channel is simulated by the duo-phonon emission model. A unified physical model for hot carrier effect, material defect, electrical parameter and noise was built. Also, a method characterizing the MOSFET anti-hot carrier abilities with noise parameter Sf^y is presented. The model is testified by the experiment, which is designed based on the relation between hot carrier and noise. Experimental results well confirm the developed model.

关 键 词：金属氧化物半导体场效应管 热载流子 1/f^y噪声 

分 类 号：O472[理学—半导体物理]