1.0μm Gate-Length GaAs MHEMT Devices and SPDT Switch MMICs  

1.0μm栅长GaAs基MHEMT器件及SPDT开关MMIC(英文)

作　　者：徐静波[1] 黎明[1] 张海英[1] 王文新 尹军舰[1] 刘亮[1] 李潇[1] 张健[1] 叶甜春[1] 

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院物理研究所,北京100080

出　　处：《Journal of Semiconductors》2008年第4期668-671,共4页半导体学报（英文版）

基　　金：国家重点基础研究发展规划(批准号:G2002CB311901);装备预先研究基金(批准号:61501050401C);中国科学院微电子研究所所长基金(批准号:O6SB124004)资助项目~~

摘　　要：1.0μm gate-length GaAs-based MHEMTs have been fabricated by MBE epitaxial material and contact-mode lithography technology. Pt/Ti/Pt/Au and Ti/Pt/Au were evaporated to form gate metals. Excellent DC and RF performances have been obtained, and the transconductance, maximum saturation drain current density, threshold voltage, current cut-off frequency,and maximum oscillation frequency of Pt/Ti/Pt/Au and Ti/Pt/Au MHEMTs were 502 （503） mS/mm, 382（530）mA/mm,0.1（ - 0.5）V,13.4（14.8）GHz,and 17.0（17.5）GHz,respectively. DC-10GHz single-pole double-throw （SPDT） switch MMICs have been designed and fabricated by Ti/Pt/Au MHEMTs. Insertion loss,isolation,input,and out- put return losses of SPDT chips were better than 2.93,23.34,and 20dB.利用MBE外延材料和接触式光学光刻方式,成功制备出1.0μm栅长GaAs基MHEMT器件,分别蒸发Pt/Ti/Pt/Au和Ti/Pt/Au作为栅电极金属.获得了优越的DC和RF性能,Pt/Ti/Pt/Au和Ti/Pt/Au MHEMT器件的gm为502(503)mS/mm,JDSS为382(530)mA/mm,VT为0.1(-0.5)V,fT和fmax分别为13.4(14.8),17.0(17.5)GHz.利用单片集成增强/耗尽型GaAs基MHEMT器件制备出九阶环型振荡器,直流电压为1.2V时,振荡频率达到777.6MHz,门延迟时间为71.4ps.利用Ti/Pt/Au MHEMT器件设计并制备出了DC-10GHz单刀双掷(SPDT)开关MMIC,其插入损耗、隔离度、输入输出回波损耗分别优于2.93,23.34和20dB.

关 键 词：MHEMT Pt/Ti/Pt/Au Ti/Pt/Au SPDT MMIC 

分 类 号：TN386[电子电信—物理电子学]