一种新的MOS器件亚阈区表面势分析方法  

New Method for Analysis of Surface Potential of MOSFET in Subthreshold Zone

作　　者：陈之昀[1] 刘晓卫[1] 卫建林[1] 谭长华[1] 许铭真[1] 

机构地区：[1]北京大学微电子研究所,北京100871

出　　处：《Journal of Semiconductors》1997年第11期844-848,共5页半导体学报（英文版）

基　　金：国家"八.五"攻关项目

摘　　要：本文根据MOS器件亚阈区转移特性国数强收敛的特点，提出了一种直接利用MOS器件转移特性确定亚阈区表面势的新方法．并讨论了界面馅饼的影响．研究结果表明，对于长沟器件，该方法的系统误差小于1．3％．与C－V法的对照实验表明，两者的结果偏差小于5％．A new method for the determination of surface potential of MOSFET under subthreshold condition is introduced. Noting that the function between channel current and the surface potential possesses the property of strong coversion in subthreshold zone,we can use subthreshold current to express surface potential simplely and analytically.The total system error including that caused by interface traps is less than 1. 3%. Compared with the results ineasured with C-V method, there is a difference less than 5%.

关 键 词：MOS器件 亚阈区 表面热分析 

分 类 号：TN386.1[电子电信—物理电子学]