GaN外延材料测试技术的研究  

Study on Testing Technology of GaN Epilayers

作　　者：刘岳巍[1] 陈宏江[2] 高蒙[1] 张志国[2] 高金环[2] 闫德利[1] 杨勇[1] 

机构地区：[1]石家庄铁道学院电气与电子工程分院,石家庄050043 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2008年第5期422-424,共3页Semiconductor Technology

摘　　要：分别用金属In和Ti/Al/Ni/Au合金层制备GaN HEMT结构外延片的霍尔测试电极,并对样品进行霍尔测试。发现In金属与外延片形成非欧姆接触,Ti/Al/Ni/Au合金层与外延片形成良好的欧姆接触。用电化学C-V方法测试样品,得到的载流子浓度与合金电极制备的样品经霍尔测试得到的载流子浓度一致,从而验证了此种霍尔测试方法的准确性,为GaN外延材料的测试提出了准确可行的测试方法。In and Ti/Al/Ni/Au were used separately in making the electrodes of Hall measurement for GaN HEMT epilayers, and the samples were tested. The results show that the contact between Ti/Al/Ni/Au electrodes and wafers is good ohmic contact, but the contact between In electrodes and wafer is non-ohmic contacts. Electrochemistry C-V was used to test the carrier concentration of the samples, and the values were consistent with that received from Hall measurement, of which the electrodes were made of Ti/Al/Ni/Au. Thus the veracity of this method is validated, and providing an exact and feasible means for the Hall measurement of GaN epilayers.

关 键 词：氮化镓 高电子迁移率晶体管 霍尔测试 原子力显微镜 

分 类 号：TN307[电子电信—物理电子学] TN304.054