基于IEEE802.11a标准的SiGe HBT LNA的设计  

Design of SiGe HBT Low-Noise Amplifier Based on IEEE802.11a

作　　者：李佳[1] 张万荣 谢红云[1] 张蔚[1] 沈珮[1] 甘军宁[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100022

出　　处：《半导体技术》2008年第5期425-427,445,共4页Semiconductor Technology

基　　金：国家自然科学基金项目(60776051;60376033);北京市教委科技发展计划项目(KM200710005015);北京市属市管高校中青年骨干教师培养计划项目(102(KB)-00856);北京市优秀跨世纪人才基金项目(67002013200301);北京工业大学青年科研基金(97002013200701);北京市自然科学基金项目(4082007)

摘　　要：基于IEEE802·11a标准描述了一款SiGe HBT低噪声放大器(LNA)的设计。为适应该标准的要求,给出了噪声、功率增益及稳定性的优化方法。选用SiGe HBTs作为有源元件,采用T型输入、输出匹配网络设计了电路,并用安捷伦ADS-2006A软件对噪声系数、增益等各项指标进行了仿真。最终在频率为5·2GHz下,LNA噪声系数F为1·5dB,增益S21达到12·6dB,输入、输出反射系数S11和S22较好,在工作频带内小于-10dB,LNA性能良好。Based on the criteria of IEEE 802.11a, a novel design of SiGe HBT LNA （low noise amplifier） was presented. In order to meet the standard of the criteria, the methods for optimizing noise, power gain and stability were given. In the circuit design, the SiGe HBTs were chosen as active devices, T- type impedance match network was used for input and output. All parameters were simulated with ADS- 2006A. The noise figure F is 1.5 dB, power gain is 12.6 dB at 5.2 GHz, and S11 and S22 are good, reaching- 10 dB in the operation frequency. The LNA shows a good performance.

关 键 词：硅锗异质结双极型晶体管 低噪声放大器 IEEE802.11A 

分 类 号：TN722.25[电子电信—电路与系统]